Research
Engineering two-dimensional (2D) quantum materials, including semi-metallic graphene, insulating hexagonal boron nitride, semiconducting 2H phase transition metal dichalcogenides (TMDCs), and topological semimetallic 1T′ phase transition metal telluride is to uncover new quantum phenomena and enable novel applications in electronics, optoelectronics, valleytronics, spintronics and quantum computing. However, engineering 2D materials and vdW heterostructures is currently limited by the fact that materials purity, synthesis, and device fabrication protocols critically influence the properties of 2D materials. To date, I have developed three important research topics in 2D materials area to accelerate the deployment of 2D material van der Waals (vdW) heterostructures in novel devices: low temperature graphene synthesized method with high mobility record, a thickness-controllable h-BN with high hard breakdown field strength, a simple CVD synthesis method for all TMDCs’ materials (MoS2, WS2, MoSe2, WSe2, ReS2, ReSe2, MoTe2, and WTe2) with high valley polarization at room temperature via defect engineering, chemical doping, and surface plasmon resonance for more suitable and practical applications. Combing the merits of 2D van der Waals heterostructures, my proposed objectives shown in the following will unravel the multiple facets of the energy-efficient quantum information processing applications.
1.Exploring the wafer-scale new type of quantum materials:
Exploring the wafer-scale new type of quantum materials such as 2D p-type semiconductor (tellurium), 2D n-type semiconductor (Bi2O2Se), 2D insulator (Bi2O5Se) and 2D ferroelectric materials (In2Se3 and In2Te4) via new pulsed-catalysis CVD method which can serve as the building blocks for advanced electronic, optoelectronic, and quantum information devices.
2. Room temperature valleytronic devices:
Manipulating the valley polarization at room temperature on the atomic monolayer thickness TMDCs materials with strong light matter interaction and ferroelectric charge doping for future energy-efficient quantum information processing applications.
3. Room temperature single photon source:
Understand the correlation and emission mechanism between single photon emission spectra of hBN and local structure for future quantum computing room temperature single photon source.
